发明名称 |
Fail address detector, semiconductor memory device including the same and method of detecting fail address |
摘要 |
A fail address detector includes cam latch groups configured to store fail addresses and a comparing section connected to the cam latch groups in common and configured to detect whether or not a fail address corresponding to a comparison address exists among the fail addresses received from the cam latch groups. The cam latch groups share the comparing section in time division. |
申请公布号 |
US9208879(B2) |
申请公布日期 |
2015.12.08 |
申请号 |
US201213717139 |
申请日期 |
2012.12.17 |
申请人 |
SK HYNIX INC. |
发明人 |
Lim Sang Oh |
分类号 |
G11C15/04;G11C15/00;G11C29/04;G11C29/44;G11C29/00 |
主分类号 |
G11C15/04 |
代理机构 |
Hauptman Ham, LLP |
代理人 |
Hauptman Ham, LLP |
主权项 |
1. A fail address detector, comprising:
cam latch groups configured to store fail addresses, respectively, wherein each of the fail addresses indicates a defect area; and a comparing section connected to the cam latch groups in common and configured to detect whether or not a fail address corresponding to a comparison address exists among the fail addresses received from the cam latch groups, wherein the cam latch groups are configured to share the comparing section in time division by sequentially transmitting the fail addresses to the comparing section, wherein the cam latch groups are configured to receive cam enable signals, respectively, the cam enable signals being activated sequentially, and wherein the cam latch groups are configured to sequentially transmit the fail addresses to the comparing section in response to the cam enable signals, respectively. |
地址 |
Icheon-Si, Gyeonggi-Do KR |