发明名称 Athermal optical modulator and method of manufacturing the same
摘要 An athermal optical modulator includes a waveguide, a ring resonator configured to receive light input from the waveguide and output modulated light to the waveguide, the ring resonator including a ridge unit located at a center of the ring resonator in a vertical section, a first contact connected to one side of the ridge unit and a second contact connected to the other side of the ridge unit, the first contact and the second contact forming paths for applying electricity to the ring resonator to form an electric field in the ring resonator, and a polymer layer covering the ridge unit.
申请公布号 US9207469(B2) 申请公布日期 2015.12.08
申请号 US201313973521 申请日期 2013.08.22
申请人 Samsung Electronics Co., Ltd. 发明人 Yang Moon-seung;Cho Seong-ho;Uddin Mohammad Rakib
分类号 G02F1/035;G02F1/025 主分类号 G02F1/035
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. An athermal optical modulator comprising: a waveguide; a ring resonator configured to receive light input from the waveguide and output modulated light to the waveguide, the ring resonator including doping regions sequentially stacked in a horizontal direction on an insulating layer, the doping regions including, a p+ doping region doped with a higher concentration of p type impurity,a p doping region doped with a lower concentration of p type impurity,an n doping region doped with a lower concentration of n type impurity, andan n+ doping region doped with a higher concentration of n type impurity, wherein the p doping region and the n doping region constitute a ridge unit located at a center of the ring resonator in a vertical section; a first contact connected to the p+ doping region located on one side of the ridge unit and a second contact connected to the n+ doping region located on the other side of the ridge unit, the first contact and the second contact forming paths for applying electricity to the ring resonator to form an electric field in the ring resonator; a polymer layer covering the ridge unit; and a protection layer covering the ring resonator on the insulating layer, wherein the first contact and the second contact fill vias in the protection layer that expose the p+ doping region and the n+ doping region, and wherein the first contact and the second contact include a metal.
地址 Gyeonggi-do KR