发明名称 |
Structure and method for a switched circuit device |
摘要 |
The present disclosure provides a switched voltage converter for receiving a source voltage and producing an output voltage. The voltage converter comprises a switch controller and a switched device communicatively coupled to the switch controller. The switch controller adjusts the output voltage by controlling a duty cycle of the switched device. The switched device is sized such that it is characterized by a drain-to-source breakdown voltage greater than or substantially equal to the source voltage and the output voltage and is further characterized by a hot-carrier injection rating less than the source voltage or the output voltage. In further embodiments, the switched device is sized such that it is characterized by a drain-to-source breakdown voltage greater than or substantially equal to a peak operating voltage and is further characterized by a hot-carrier injection rating less than the peak operating voltage. |
申请公布号 |
US9209683(B2) |
申请公布日期 |
2015.12.08 |
申请号 |
US201213599909 |
申请日期 |
2012.08.30 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Kalnitsky Alexander |
分类号 |
G05F1/46;H02M3/155;H01L29/78 |
主分类号 |
G05F1/46 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A semiconductor circuit for receiving a source voltage and producing an output voltage, the circuit comprising:
a switch controller; a switched device communicatively coupled to the switch controller and having a source and drain, the switch controller controlling a duty cycle of the switched device; a diode coupled between the source and the drain of the switched device; and an inductor coupled to at least one of the source of the switched device or the drain of the switched device; wherein the inductor is directly electrically coupled to a body of the switched device; wherein the switched device is characterized by a drain-to-source breakdown voltage greater than or substantially equal to a greater of the source voltage and the output voltage; and wherein the switched device is further characterized by a hot-carrier injection rating less than a greater of the source voltage and the output voltage. |
地址 |
Hsin-Chu TW |