发明名称 Structure and method for a switched circuit device
摘要 The present disclosure provides a switched voltage converter for receiving a source voltage and producing an output voltage. The voltage converter comprises a switch controller and a switched device communicatively coupled to the switch controller. The switch controller adjusts the output voltage by controlling a duty cycle of the switched device. The switched device is sized such that it is characterized by a drain-to-source breakdown voltage greater than or substantially equal to the source voltage and the output voltage and is further characterized by a hot-carrier injection rating less than the source voltage or the output voltage. In further embodiments, the switched device is sized such that it is characterized by a drain-to-source breakdown voltage greater than or substantially equal to a peak operating voltage and is further characterized by a hot-carrier injection rating less than the peak operating voltage.
申请公布号 US9209683(B2) 申请公布日期 2015.12.08
申请号 US201213599909 申请日期 2012.08.30
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Kalnitsky Alexander
分类号 G05F1/46;H02M3/155;H01L29/78 主分类号 G05F1/46
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A semiconductor circuit for receiving a source voltage and producing an output voltage, the circuit comprising: a switch controller; a switched device communicatively coupled to the switch controller and having a source and drain, the switch controller controlling a duty cycle of the switched device; a diode coupled between the source and the drain of the switched device; and an inductor coupled to at least one of the source of the switched device or the drain of the switched device; wherein the inductor is directly electrically coupled to a body of the switched device; wherein the switched device is characterized by a drain-to-source breakdown voltage greater than or substantially equal to a greater of the source voltage and the output voltage; and wherein the switched device is further characterized by a hot-carrier injection rating less than a greater of the source voltage and the output voltage.
地址 Hsin-Chu TW