发明名称 Bootstrap circuitry for an IGBT
摘要 A bootstrap circuit provides a gate-emitter voltage to the high-side IGBT of a half-bridge IGBT arrangement. The bootstrap circuit includes a buck-boost circuit for providing a negative gate-emitter voltage for turning the high-side IGBT off.
申请公布号 US9209793(B2) 申请公布日期 2015.12.08
申请号 US201213399463 申请日期 2012.02.17
申请人 Infineon Technologies Austria AG 发明人 Lee Jong-Mu;Kim Man-Kee
分类号 H03K17/06 主分类号 H03K17/06
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A bootstrap circuit for providing a drive voltage to a high-side transistor of a half-bridge arrangement, the bootstrap circuit comprising a buck-boost circuit configured to provide a negative drive voltage for turning the high-side transistor off via a negative supply node, wherein the buck-boost circuit comprises a first capacitor coupled between an output node of the half-bridge arrangement and the negative supply node, an inductor having a first terminal coupled to the output node of the half-bridge arrangement, and a diode coupled between a second terminal of the inductor and the negative supply node.
地址 Villach AT