发明名称 |
Bootstrap circuitry for an IGBT |
摘要 |
A bootstrap circuit provides a gate-emitter voltage to the high-side IGBT of a half-bridge IGBT arrangement. The bootstrap circuit includes a buck-boost circuit for providing a negative gate-emitter voltage for turning the high-side IGBT off. |
申请公布号 |
US9209793(B2) |
申请公布日期 |
2015.12.08 |
申请号 |
US201213399463 |
申请日期 |
2012.02.17 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Lee Jong-Mu;Kim Man-Kee |
分类号 |
H03K17/06 |
主分类号 |
H03K17/06 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A bootstrap circuit for providing a drive voltage to a high-side transistor of a half-bridge arrangement, the bootstrap circuit comprising a buck-boost circuit configured to provide a negative drive voltage for turning the high-side transistor off via a negative supply node, wherein the buck-boost circuit comprises a first capacitor coupled between an output node of the half-bridge arrangement and the negative supply node, an inductor having a first terminal coupled to the output node of the half-bridge arrangement, and a diode coupled between a second terminal of the inductor and the negative supply node. |
地址 |
Villach AT |