Vertical topology light-emitting device

摘要

A vertical topology light emitting device comprises a metal support structure; an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer; a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer; a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers; a multi-layered electrode structure on the GaN-based semiconductor structure; and a protective layer on a side surface and a top surface of the GaN-based semiconductor structure, wherein the protective layer is further disposed on the multi-layered electrode structure.

主权项

1. A light emitting device, comprising:
a metal support structure comprising Cu; an adhesion structure on the metal support structure; a first metal layer on the adhesion structure; a second metal layer comprising Ti on the first metal layer; a GaN-based semiconductor structure on the second metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers; an interface layer on the GaN-based semiconductor structure; and a contact pad on the interface layer, wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and wherein a thickness of the metal support structure is 0.5 times or less than that of a side width of the GaN-based semiconductor structure.