Method for fabricating triangular prismatic m-plane nitride semiconductor light-emitting diode

摘要

When a belt-like nitride semiconductor stacking structure 110 having a principal plane of an m-plane is broken along a linear groove 104, two or more side surfaces may be formed on the lateral side thereof. This decreases the fabrication efficiency of the triangular prismatic m-plane nitride semiconductor light-emitting diode. To solve this problem, Angle X of not less than 75 degrees and not more than 105 degrees is formed between the linear groove 104 and one cleavage axis selected from the group consisting of an a-axis and a c-axis. Then, the belt-like nitride semiconductor stacking structure 110 was broken along the linear groove 104 to form a quadratic prismatic nitride semiconductor stacking structure 120. Subsequently, the quadratic prismatic nitride semiconductor stacking structure 120 is broken along another linear groove 106 to obtain a triangular prismatic m-plane nitride semiconductor light-emitting diode 130.

主权项

1. A method for fabricating a triangular prismatic nitride semiconductor light-emitting diode, the method comprising:
(a) preparing a plate-like nitride semiconductor stacking structure comprising an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer; wherein the active layer is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; the plate-like nitride semiconductor stacking structure has a principal plane of an m-plane; the principal plane has a first linear groove, a second linear groove, and a third linear groove; the first linear groove, the second linear groove, and the third linear groove form a triangle in a top view; the first linear groove has a longitudinal direction substantially parallel to one cleavage axis selected from the group consisting of an a-axis and a c-axis; and the following formulae (I) to (III) are satisfied:
75 degrees≦Angle X≦105 degrees  (I)20 degrees≦Angle Y  (II)20 degrees≦Angle Z  (III) where Angle X represents an angle formed between the cleavage axis and a longitudinal direction of the second linear groove; Angle Y represents an angle formed between the longitudinal direction of the first linear groove and a longitudinal direction of the third linear groove; and Angle Z represents an angle formed between the longitudinal direction of the second linear groove and the longitudinal direction of the third linear groove, (b) breaking the plate-like nitride semiconductor stacking structure, which has been prepared in the step (a), along the first linear groove to form a belt-like nitride semiconductor stacking structure, wherein the belt-like nitride semiconductor stacking structure has a first side surface on a first lateral side thereof; and the first side surface is parallel to the longitudinal direction of the first linear groove; (c) breaking the belt-like nitride semiconductor stacking structure, which has been formed in the step (b), along the second linear groove to form a quadratic prismatic nitride semiconductor stacking structure, wherein the quadratic prismatic nitride semiconductor stacking structure has the first side surface on the first lateral side thereof and a second side surface on a second lateral side thereof; and the second side surface is parallel to the longitudinal direction of the second linear groove; and (d) breaking the quadratic prismatic nitride semiconductor stacking structure, which has been formed in the step (c), along the third linear groove to form the triangular prismatic nitride semiconductor light-emitting diode, wherein the triangular prismatic nitride semiconductor light-emitting diode has the first side surface on the first lateral side thereof, the second side surface on the second lateral side thereof, and a third side surface on a third lateral side thereof, and the third side surface is parallel to the longitudinal direction of the third linear groove.