| 发明名称 | Semiconductor device and fabrication method thereof | ||
| 摘要 | A method of fabricating a semiconductor device is provided. The method includes forming a substrate structure, wherein the substrate structure includes a substrate and a fin-shaped barrier layer formed on a surface of the substrate; forming a quantum well (QW) material layer on a surface of the fin-shaped barrier layer; and forming a barrier material layer on the QW material layer. | ||
| 申请公布号 | US9209289(B2) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201414264529 | 申请日期 | 2014.04.29 |
| 申请人 | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION | 发明人 | Xiao De Yuan |
| 分类号 | H01L29/772;H01L29/778;H01L29/66;H01L29/423;H01L29/12;H01L29/775;H01L29/06 | 主分类号 | H01L29/772 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A method of fabricating a semiconductor device, the method comprising: forming a substrate structure, wherein the substrate structure includes a substrate and a fin-shaped barrier layer formed on a surface of the substrate; forming an insulating part adjacent to the fin-shaped barrier layer on the surface of the substrate, wherein the surface of the substrate directly contacts each of the fin-shaped barrier and the insulating part and is parallel to a bottom side of the substrate; forming a quantum well (QW) material layer on a surface of the fin-shaped barrier layer; and forming a barrier material layer on the QW material layer. | ||
| 地址 | CN | ||