Method of fabricating a thin-film device

摘要

A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

主权项

1. A method of fabricating a thin-film device, including:
forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation treatment, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer, wherein the thin-film device comprises an insulating substrate; and
the oxide-semiconductor film formed on the first electrical insulator is not in contact with the insulating substrate.