| 发明名称 | Advanced ultra low k SiCOH dielectrics prepared by built-in engineered pore size and bonding structured with cyclic organosilicon precursors | ||
| 摘要 | Disclosed herein is an ultra-low dielectric (k) film and methods of making thereof. A ultra-low k film has a covalently bonded network comprising atoms of silicon, oxygen, carbon, and hydrogen, a cyclotrisilane structure, and a plurality of pores having a pore size distribution (PSD) of less than about 1.1 nanometers (nm). The ultra-low k film has a k value of less than about 2.4 and at least about 28 atomic percent of carbon. | ||
| 申请公布号 | US9209017(B2) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201414225810 | 申请日期 | 2014.03.26 |
| 申请人 | International Business Machines Corporation | 发明人 | Canaperi Donald F.;Nguyen Son V.;Priyadarshini Deepika;Shobha Hosadurga K. |
| 分类号 | H01L21/47;H01L21/02;H01B3/46;H01L23/532 | 主分类号 | H01L21/47 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Meyers Steven |
| 主权项 | 1. An ultra-low dielectric (k) film comprising: a covalently bonded network comprising atoms of silicon, oxygen, carbon, hydrogen, and a cyclotrisilane structure; and a plurality of pores having a pore size distribution (PSD) of less than about 1.1 nanometers (nm); wherein the ultra-low k film has a k value of less than about 2.4 and at least about 28 atomic percent of carbon. | ||
| 地址 | Armonk NY US | ||