Pattern forming method

摘要

According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.

主权项

1. A pattern forming method comprising:
a) applying a self-assembling block copolymer including a first block and a second block onto a film to be processed and self-assembling the block copolymer to form a pattern including a first block phase and a second block phase, the block copolymer having a property that the entire block copolymer is removed under a first condition including energy beam irradiation or heating, and development or dry etching, whereas a self-assembled first block phase is selectively removed under a second condition including energy beam irradiation or heating, and development or dry etching; b) removing the entire self-assembled block copolymer present in a first region of said pattern formed in a) under the first condition by carrying out energy beam irradiation or heating selectively to the self-assembled block copolymer and carrying out development or dry etching; c) selectively removing the first block phase present in a second region of said pattern formed in a) under the second condition by carrying out energy beam irradiation or heating selectively to the self-assembled block copolymer in said second region and carrying out development or dry etching, thereby leaving a new pattern including no self-assembled block copolymer in the first region, self-assembled block copolymer including the first and second block phases in regions of said pattern formed in a) other than the first region and the second region, and the second block phase in the second region; and etching the film to be processed with the new pattern as a mask.