发明名称 Layer-selective laser ablation patterning
摘要 A method of fabricating an organic electronic device is provided. The organic electronic device has a structure including an upper conductive layer and an underlying layer immediately beneath said upper conducting layer and having at least one solution process able semiconducting layer. The upper conducting layer preferably has a thickness of between 10 nm and 200 nm. The method includes patterning said upper conductive layer of said structure by: laser ablating said upper conductive layer using a pulsed laser to remove regions of upper conductive layer from said underlying layer for said patterning; and wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer to expose said underlying layer beneath.
申请公布号 US9209400(B2) 申请公布日期 2015.12.08
申请号 US200611915731 申请日期 2006.05.30
申请人 FLEXENABLE LIMITED 发明人 Hayton Carl;Brown Thomas Meredith;Cain Paul A.
分类号 H01L21/302;H01L21/461;H01L21/44;H01L51/40;H01L51/00;H01L21/268;H01L21/02;H01L21/768;B23K26/06;B23K26/40;H01L51/10;H01L27/12;H01L29/786;H01L51/05 主分类号 H01L21/302
代理机构 Knobbe Martens Olson & Bear LLP 代理人 Knobbe Martens Olson & Bear LLP
主权项 1. A method of fabricating an organic electronic device, said organic electronic device having a structure including an inorganic metal upper conductive layer and an underlying layer immediately beneath said upper conductive layer, the method comprising patterning said upper conductive layer of said structure by: laser ablating said inorganic metal upper conductive layer using a pulsed laser to remove a region of said inorganic metal upper conductive layer from said underlying layer for said patterning; wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said inorganic metal upper conductive layer to expose said underlying layer beneath; wherein the fluence of said laser pulse is greater than an ablation threshold of said underlying layer and wherein said inorganic metal upper conductive layer has an optical density greater than that of said underlying layer at a wavelength of said laser pulse; and wherein said underlying layer is substantially undamaged by said ablating wherein said underlying layer comprises a layer formed of an organic material; and wherein said inorganic metal upper conductive layer has an optical density greater than 1.
地址 Cambridge, Cambridgeshire GB