发明名称 Mechanisms for forming backside illuminated image sensor structure
摘要 Embodiments of mechanisms of a backside illuminated image sensor structure are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.
申请公布号 US9209339(B2) 申请公布日期 2015.12.08
申请号 US201314099481 申请日期 2013.12.06
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 Chang Hung-Chang;Hsu Chun-Yuan;Chen Chien-Chung;Lin Yung-Hsieh
分类号 H01L27/146;H01L31/18;H01L31/0232 主分类号 H01L27/146
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A method for forming a backside illuminated image sensor structure, comprising: providing a device substrate having a plurality of pixels formed at a frontside of the device substrate; polishing a backside of the device substrate to expose the pixels; forming a dielectric layer over the backside of the device substrate; patterning the dielectric layer to form a trench in the dielectric layer; plating a metal layer in the trench and over the dielectric layer; polishing the metal layer to form a metal element; forming a color filter layer over the dielectric layer; and forming a microlens layer over the color filter layer.
地址 Hsin-Chu TW