发明名称 |
Mechanisms for forming backside illuminated image sensor structure |
摘要 |
Embodiments of mechanisms of a backside illuminated image sensor structure are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper. |
申请公布号 |
US9209339(B2) |
申请公布日期 |
2015.12.08 |
申请号 |
US201314099481 |
申请日期 |
2013.12.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
Chang Hung-Chang;Hsu Chun-Yuan;Chen Chien-Chung;Lin Yung-Hsieh |
分类号 |
H01L27/146;H01L31/18;H01L31/0232 |
主分类号 |
H01L27/146 |
代理机构 |
Birch, Stewart, Kolasch & Birch, LLP |
代理人 |
Birch, Stewart, Kolasch & Birch, LLP |
主权项 |
1. A method for forming a backside illuminated image sensor structure, comprising:
providing a device substrate having a plurality of pixels formed at a frontside of the device substrate; polishing a backside of the device substrate to expose the pixels; forming a dielectric layer over the backside of the device substrate; patterning the dielectric layer to form a trench in the dielectric layer; plating a metal layer in the trench and over the dielectric layer; polishing the metal layer to form a metal element; forming a color filter layer over the dielectric layer; and forming a microlens layer over the color filter layer. |
地址 |
Hsin-Chu TW |