N/P MOS FinFET performance enhancement by specific orientation surface

摘要

As will be appreciated in more detail herein, the present disclosure provides for FinFET techniques whereby a FinFET channel region has a particular orientation with respect to the crystalline lattice of the semiconductor device to provide enhanced mobility, compared to conventional FinFETs. In particular, the present disclosure provides FinFETs with a channel region whose lattice includes silicon atoms arranged on (551) lattice plane. In this configuration, the sidewalls of the channel region are particularly smooth at the atomic level, which tends to promote higher carrier mobility and higher device performance than previously achievable.

主权项

1. An integrated circuit, comprising:
a fin of semiconductor material having a base fin portion having a base fin width, an upper fin portion having an upper fin width, and outer fin sidewalls extending upwardly from the base fin portion to the upper fin portion, wherein an outer sidewall of the fin is disposed on a (551) lattice plane, a conductive gate electrode straddling a channel region of the fin and having a gate dielectric separating the conductive gate electrode from the channel region; source and drain regions disposed in the fin on opposite edges of the conductive gate electrode; and an undoped polysilicon region extending continuously over the outer fin sidewall and the upper fin portion, wherein the undoped polysilicon region is sandwiched between the outer fin sidewall and the gate dielectric.