Fabrication of shielded gate trench MOSFET with increased source-metal contact

摘要

Fabricating a semiconductor device includes: forming a gate trench on a semiconductor substrate; forming a spacer inside the gate trench; forming one or more gate electrodes within the gate trench; implanting a body region; implanting a source region; forming a contact trench; disposing dielectric material within the gate trench; removing at least a portion of the dielectric material such that at least a portion of the source region extends above the dielectric material; and depositing a metal layer over at least a portion of a gate trench opening, at least a portion of the source region, and at least a portion of the contact trench.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a gate trench on a semiconductor substrate; forming a spacer inside the gate trench, including disposing a layer of spacer material in the gate trench, and removing at least a portion of the layer of spacer material from a bottom region of the gate trench to form the spacer; prior to substantially removing the spacer, forming a plurality of electrodes within the gate trench; substantially removing the spacer; forming a body region; forming a source region; forming a contact trench; disposing a dielectric material within the gate trench; removing at least a portion of the dielectric material such that a top surface of the source region extends above the dielectric material; and depositing a metal layer over at least a portion of a gate trench opening, at least a portion of the source region, and at least a portion of the contact trench.