Integrated monolithic galvanic isolator

摘要

A semiconductor device is described that includes a first electrical circuit and a second electrical circuit formed on a semiconductor on insulator wafer. The semiconductor on insulator wafer has a layer of semiconducting material formed over a buried layer of insulating material formed over a supporting layer of material. A wide deep trench is formed in the semiconductor on insulator wafer to galvanically isolate the first electrical circuit from the second electrical circuit. The first electrical circuit and the second electrical circuit are coupled together for exchanging energy between the galvanically isolated electrical circuits.

主权项

1. A semiconductor device comprising:
a first electrical circuit formed on a semiconductor on insulator wafer, the semiconductor on insulator wafer having a layer of semiconducting material formed over a buried layer of insulating material formed over a supporting layer of material; a second electrical circuit formed on the semiconductor on insulator wafer; and a wide deep trench more than two micrometers (2 μm) wide formed in the semiconductor on insulator wafer to galvanically isolate the first electrical circuit from the second electrical circuit, where the first electrical circuit and the second electrical circuit are coupled together for exchanging energy between the galvanically isolated electrical circuits, wherein the supporting layer of material comprises a handle wafer substrate, and the semiconductor on insulator wafer is formed with a cavity of insulating material within the handle wafer substrate below at least one of the first electrical circuit or the second electrical circuit for further isolating the first electrical circuit from the second electrical circuit.