Dummy gate for a high voltage transistor device

摘要

The present disclosure provides a semiconductor device. The semiconductor device includes a first doped region and a second doped region both formed in a substrate. The first and second doped regions are oppositely doped. The semiconductor device includes a first gate formed over the substrate. The first gate overlies a portion of the first doped region and a portion of the second doped region. The semiconductor device includes a second gate formed over the substrate. The second gate overlies a different portion of the second doped region. The semiconductor device includes a first voltage source that provides a first voltage to the second gate. The semiconductor device includes a second voltage source that provides a second voltage to the second doped region. The first and second voltages are different from each other.

主权项

1. A semiconductor device, comprising:
a first doped region and a second doped region both disposed in a substrate, the first and second doped regions having different types of conductivity; a first gate disposed over the substrate, the first gate overlying a portion of the first doped region and a portion of the second doped region, wherein an upper surface of the first gate is silicided; and a second gate disposed over the substrate, the second gate overlying a different portion of the second doped region, wherein an upper surface of the second gate is silicided.