| 发明名称 | Controlling the melt front of thin film applications | ||
| 摘要 | Systems and methods for bonding include selectively heating an initial location of a sample to melt a bonding layer at an interface between a first layer and a second layer of the sample. The heating is propagated in a direction away from the initial location such that a melt front of the bonding layer is translated across the interface to provide a void free bond between the first layer and the second layer. | ||
| 申请公布号 | US9205631(B2) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201313966622 | 申请日期 | 2013.08.14 |
| 申请人 | GLOBALFOUNDRIES INC | 发明人 | Bedell Stephen W.;Ott John A. |
| 分类号 | B29C65/00;B32B37/00;B32B37/06;B32B37/04;H01L21/00;B23K3/04;B23K37/00;B23K37/06;H01L21/02;B32B9/04;B32B37/10;B32B15/00;B32B1/00 | 主分类号 | B29C65/00 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. |
| 主权项 | 1. A method for bonding, comprising: selectively heating an initial location of a sample to melt a bonding layer at an interface between a first layer and a second layer of the sample; and removing voids in the bonding layer by propagating the heating in a single direction away from the initial location such that a melt front of the bonding layer is translated across the interface to provide a void free bond between the first layer and the second layer. | ||
| 地址 | Grand Cayman KY | ||