| 摘要 |
According to an embodiment of the present invention, a semiconductor device comprises: a though silicon via (TSV) area located in a central portion of a semiconductor chip; cell areas located on both sides of the TSV area; peripheral circuit areas located between the TSV area and the cell areas and between the cell areas; a test pad area located in an edge area of the semiconductor chip to surround the cell areas, the peripheral circuit areas, and the TSV area, and where test pads are arranged; and reservoir capacitors located in lower portions of the test pads within the test pad area. By forming high capacity reservoir capacitors having a capacitance of a μF level within the semiconductor device without increasing an area of the chip, the semiconductor device can effectively cope with a power distribution network (PDN). |
