| 发明名称 | Method for fabricating flexible electrical devices | ||
| 摘要 | A method for fabricating a flexible electrical device is provided. The method includes providing a first substrate, providing a second substrate opposed to the first substrate, wherein one of the first and second substrates includes a polyimide polymer of Formula (I); wherein B is a polycyclic aliphatic group, A is an aromatic group containing at least one ether bond, A′ is an aromatic or aliphatic group, and 1≦n/m≦4, directly fabricating a thin film transistor (TFT) on one of the first and second substrates which includes the polyimide polymer of Formula (I), and disposing a medium layer between the first substrate and the second substrate. | ||
| 申请公布号 | US9209403(B2) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201313912172 | 申请日期 | 2013.06.06 |
| 申请人 | INDUSTRIAL TECHNOLOGY RESEARCH CENTER | 发明人 | Tseng Chi-Fu;Leu Chyi-Ming;Liao Hsueh-Yi;Tseng Yung-Lung |
| 分类号 | H01L31/0392;C08G73/10;H01L51/00;C08L79/08 | 主分类号 | H01L31/0392 |
| 代理机构 | Pai Patent & Trademark Law Firm | 代理人 | Pai Patent & Trademark Law Firm ;Pai Chao-Chang David |
| 主权项 | 1. A method for fabricating a flexible electrical device, comprising: providing a first substrate; providing a second substrate opposed to the first substrate, wherein one of the first and second substrates comprises a polyimide polymer of Formula (I): wherein when B is A is and A′ is or when B is A is and A′ is and 1 ≦nm≦4; directly fabricating a thin film transistor (TFT) on one of the first and second substrates which comprises the polyimide polymer of Formula (I); and disposing a medium layer between the first substrate and the second substrate. | ||
| 地址 | Hsinchu County TW | ||