发明名称 Optoelectronic module and method for producing an optoelectronic module
摘要 An optoelectronic module has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has a layer having a first conductivity, a layer having a second conductivity, a radiation surface and a contact surface which lies opposite the radiation surface. A contact is attached to the radiation surface. A frame made of a potting compound laterally encloses the semiconductor chip in at least some regions such that the radiation surface and the contact surface are substantially free of the potting compound. A first contact structure is arranged in at least some regions on the frame and in at least some regions on the contact surface. A second contact structure is arranged in at least some regions on the frame and in at least some regions on the contact of the radiation surface.
申请公布号 US9209372(B2) 申请公布日期 2015.12.08
申请号 US201314404428 申请日期 2013.05.15
申请人 OSRAM Opto Semiconductors GmbH 发明人 Illek Stefan
分类号 H01L33/62;H01L33/58;H01L33/64 主分类号 H01L33/62
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. An optoelectronic module comprising: a semiconductor chip for emitting electromagnetic radiation, the semiconductor chip having a layer having a first conductivity, a layer having a second conductivity, an emission surface and a contact surface situated opposite the emission surface; a contact on the emission surface; a frame composed of potting compound, the frame enclosing the semiconductor chip laterally at least regionally in such a way that the emission surface and the contact surface are substantially free of potting compound; a first contact structure, at least regionally arranged on the frame and at least regionally arranged on the contact surface, in electrical contact with the layer having the first conductivity; a second contact structure, at least regionally arranged on the frame and at least regionally arranged on the contact of the emission surface, in electrical contact with the layer having the second conductivity; a mixing element to spatially intermix electromagnetic radiation, wherein the mixing element is disposed downstream of the semiconductor chip in an emission direction; and a structured mirror layer or a structured scattering layer arranged at least regionally between the frame and the mixing element.
地址 Regensburg DE