| 发明名称 | Power semiconductor device | ||
| 摘要 | A power semiconductor device may include: a first conductivity-type first semiconductor region; a second conductivity-type second semiconductor region disposed above the first semiconductor region; a trench gate penetrating through the second semiconductor region and a portion of the first semiconductor region; a third semiconductor region disposed on both sides of the trench gate and disposed on an inner side of an upper portion of the second semiconductor region; and a device protective region disposed in the third semiconductor region. | ||
| 申请公布号 | US9209287(B2) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201414271075 | 申请日期 | 2014.05.06 |
| 申请人 | SAMSUNG ELECTRO-MECHANICS CO., LTD. | 发明人 | Park Jae Hoon;Kim Ji Hye;Mo Kyu Hyun;Oh Ji Yeon;Seo Dong Soo |
| 分类号 | H01L29/739;H01L29/06;H01L29/10 | 主分类号 | H01L29/739 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A power semiconductor device comprising: a first conductivity-type first semiconductor region; a second conductivity-type second semiconductor region disposed above the first semiconductor region; a trench gate penetrating through the second semiconductor region and a portion of the first semiconductor region; a third semiconductor region disposed on both sides of the trench gate and disposed on an inner side of an upper portion of the second semiconductor region; and a device protective region disposed in the third semiconductor region, wherein the device protective region is disposed in at least a portion of an interface between the third semiconductor region and the second semiconductor region. | ||
| 地址 | Suwon-Si, Gyeonggi-Do KR | ||