Structure and manufacturing method of the structure, and gallium nitride-based semiconductor light-emitting device using the structure and manufacturing method of the device

摘要

In a structure including a gallium nitride-based semiconductor having an m-plane as a principal plane, and a metal layer provided on the principal plane, the principal plane has an n-type conductivity. An interface between the gallium nitride-based semiconductor and the metal layer contains oxygen. The metal layer includes a crystal grain extending form a lower surface to an upper surface of the metal layer.

主权项

1. A structure, comprising:
a gallium nitride-based semiconductor layer having an m-plane as a principal plane; and a silver layer provided on the principal plane, wherein the principal plane has an n-type conductivity, an interface between the gallium nitride-based semiconductor layer and the silver layer contains oxygen, the silver layer includes a crystal grain extending from a lower surface to an upper surface of the silver layer, and an oxygen concentration at the interface between the gallium nitride-based semiconductor layer and the silver layer is not less than 30 times and not more than 200 times an oxygen concentration in the silver layer.