FinFET-based semiconductor device with dummy gates

摘要

A semiconductor device is provided. A substrate includes first and second active fins disposed in a row along a first direction. The first and second active fins are spaced apart from each other. A first dummy gate and a second dummy gate are disposed on the substrate and are extended in a second direction intersecting the first direction. The first dummy gate covers an end portion of the first active fin. The second dummy gate covers an end portion of the second active fin facing the end portion of the first active fin. A first dummy spacer is disposed on a sidewall of the first dummy gate. A second dummy spacer is disposed on a sidewall of the second dummy gate. The sidewall of the second dummy gate faces the sidewall of the first dummy gate. The first dummy spacer is in contact with the second dummy spacer.

主权项

1. A semiconductor device comprising:
a substrate including a first active fin and a second active fin, wherein the first active fin and the second active fin are disposed in a row along a first direction, wherein the first active fin and the second active fin are extended in the first direction, wherein the first active fin is spaced apart from the second active fin in the first direction; a first dummy gate disposed on the substrate, wherein the first dummy gate is extended in a second direction intersecting the first direction, wherein the first dummy gate covers an end portion of the first active fin; a second dummy gate disposed on the substrate, wherein the second dummy gate is extended in the second direction, wherein the second dummy gate covers an end portion of the second active fin, wherein the end portion of the second active fin faces the end portion of the first active fin; a first dummy spacer disposed on a sidewall of the first dummy gate; and a second dummy spacer disposed on a sidewall of the second dummy gate, wherein the sidewall of the second dummy gate faces the sidewall of the first dummy gate, wherein the first dummy spacer is in contact with the second dummy spacer.