Three dimensional integrated circuits stacking approach

摘要

A semiconductor package and a method of forming a semiconductor package with one or more dies over an interposer die are provided. By forming a first redistribution structure over the interposer die with TSVs, the die(s) bonded to the interposer die can have edge(s) beyond the boundary of the interposer die. In addition, a second redistribution structure may be formed on the opposite surface of the interposer die from the redistribution structure. The second redistribution structure enables reconfiguration and fan-out of bonding structures for external connectors of the interposer die.

主权项

1. A semiconductor package, comprising:
an interposer substrate with through substrate vias (TSVs); a first packaged die; a first redistribution structure over a first surface of the interposer substrate, wherein the first redistribution structure includes a first redistribution layer (RDL) to enable fan-out of the interposer substrate, and wherein the first packaged die is bonded to the first redistribution layer, and wherein an edge of the first packaged die is beyond a nearest edge of the interposer substrate; and a second packaged die bonded to the first redistribution structure, and a space between the second packaged die and the first redistribution structure is free of the first packaged die.