发明名称 Embedded semiconductor device package and method of manufacturing thereof
摘要 A package structure includes a dielectric layer, at least one semiconductor device attached to the dielectric layer, one or more dielectric sheets applied to the dielectric layer and about the semiconductor device(s) to embed the semiconductor device(s) therein, and a plurality of vias formed to the semiconductor device(s) that are formed in at least one of the dielectric layer and the one or more dielectric sheets. The package structure also includes metal interconnects formed in the vias and on one or more outward facing surfaces of the package structure to form electrical interconnections to the semiconductor device(s). The dielectric layer is composed of a material that does not flow during a lamination process and each of the one or more dielectric sheets is composed of a curable material configured to melt and flow when cured during the lamination process so as to fill-in any air gaps around the semiconductor device(s).
申请公布号 US9209151(B2) 申请公布日期 2015.12.08
申请号 US201314037728 申请日期 2013.09.26
申请人 General Electric Company 发明人 Chauhan Shakti Singh;McConnelee Paul Alan;Gowda Arun Virupaksha
分类号 H01L23/48;H01L23/52;H01L29/40;H01L23/00;H01L23/538;H05K1/18;H01L23/34;H05K3/46;H05K1/02;H05K3/30 主分类号 H01L23/48
代理机构 Ziolkowski Patent Solutions Group, SC 代理人 Ziolkowski Patent Solutions Group, SC ;Testa Jean K.
主权项 1. A package structure comprising: a first dielectric layer; at least one semiconductor device attached to the first dielectric layer; one or more dielectric sheets applied to the first dielectric layer and about the at least one semiconductor device so as to embed the at least one semiconductor device therein; a plurality of vias formed to the at least one semiconductor device, the plurality of vias formed in at least one of the first dielectric layer and the one or more dielectric sheets; metal interconnects formed in the plurality of vias and on one or more outward facing surfaces of the package structure to form electrical interconnections to the at least one semiconductor device; and a dielectric web positioned about the at least one semiconductor device, with the dielectric web including one or more openings formed therein to receive the at least one semiconductor device; wherein the first dielectric layer is composed of a material that does not flow during a lamination process; wherein each of the one or more dielectric sheets is composed of a curable material that melts and flows when cured during the lamination process, such that the one or more dielectric sheets melt and flow to fill-in any air gaps present around the at least one semiconductor device.
地址 Schenectady NY US