Semiconductor memory device having pads

摘要

A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.

主权项

1. A semiconductor memory device, comprising:
a chip pad region comprising a first differential signal pad configured to receive a first differential data signal, a second differential signal pad configured to receive a second differential data signal having a level being opposite to a level of the first differential data signal, and a power pad configured to receive a voltage through a power signal line and interposed between the first and second differential signal pads, wherein a first distance between the first differential signal pad and the power pad is substantially same with a second distance between the second differential signal pad and the power pad, to be equalized an effective termination resistor between the first differential signal pad and the power pad, with an effective termination resistor between the second differential signal pad and the power pad.