Method to increase interconnect reliability

摘要

Methods to increase metal interconnect reliability are provided. Methods include forming a conformal barrier layer within an opening in a semiconductor device structure and forming a copper alloy material above the conformal barrier layer. Next, removing the copper alloy material that extends beyond the opening. Removing native oxide from a top surface of the copper alloy material. Further, annealing or applying a plasma treatment to the copper alloy material. Finally, forming a capping layer above the copper alloy material. Notably, near the top of the copper alloy material, smaller copper grain growth may be present. Furthermore, more non-copper alloy atoms are present near the top of the copper alloy material than the bulk of the copper alloy material.

主权项

1. A method for processing of a substrate in a combinatorial manner, the method comprising:
providing a substrate comprising a plurality of site-isolated regions and using a combinatorial showerhead for processing the plurality of site-isolated regions in a combinatorial manner, comprising:
forming a barrier layer within an opening in each site-isolated region of the plurality of site-isolated regions;forming a copper alloy material above the barrier layer in the each site-isolated region;removing any copper alloy material that extends beyond the opening in the each site-isolated region;removing native oxide from a top surface of any remaining copper alloy material in the each site-isolated region;annealing the remaining copper alloy material in the each site-isolated region; andforming a capping layer above the remaining copper alloy material in the each site-isolated region.