Semiconductor device and method of manufacturing the same

摘要

Both enhancement of embeddability of a wiring groove and suppression of the generation of a coupling failure between a wiring and a coupling member are simultaneously achieved. In a cross-section perpendicular to a direction passing through the contact and a direction in which the second wiring extends, the center of the contact is more close to a first side surface of the second wiring than the center of the second wiring. In addition, when a region where the first side surface of the second wiring overlaps the contact in the direction in which the second wiring extends, is set to be an overlapping region, at least the lower part of the overlapping region has an inclination steeper than that of other portions of the side surface of the second wiring.

主权项

1. A semiconductor device comprising:
a first wiring; a first interlayer insulating film formed over the first wiring; a coupling hole formed in the first interlayer insulating film and located over the first wiring; a coupling member embedded in the coupling hole and formed of an electrically conductive material; a second interlayer insulating film located over the coupling member and over the first interlayer insulating film; a wiring groove formed in the second interlayer insulating film and overlapping the coupling member in a plan view; and a second wiring embedded within the wiring groove, wherein the coupling member extends in a first direction between the first wiring and the second wiring, wherein in a cross-section perpendicular to a direction passing through the coupling member and a direction in which the second wiring extends, a center of the coupling member along a second direction perpendicular to the first direction is closer to a first side surface of the second wiring than a center of the second wiring along the second direction, and wherein at least a lower part of an overlapping region that is a region where the first side surface of the second wiring overlaps the coupling member in the direction in which the second wiring extends, has an inclination steeper than that of other portions of the side surface of the second wiring.