Semiconductor device having stacked substrates with protruding and recessed electrode connection

摘要

A first substrate with a penetration electrode formed thereon is stacked on a second substrate with a protruding electrode formed thereon. The penetration electrode has a recessed portion. The substrates are stacked with the protruding electrode entered in the recessed portion. A distal width of the protruding electrode is smaller than an opening width of the recessed portion.

主权项

1. A semiconductor device comprising:
a first substrate having a first face and a second face; a penetration electrode that is disposed so as to penetrate the first substrate; a second substrate; and a protruding electrode that protrudes from the second substrate, the penetration electrode having a recess at a first face side, and the protruding electrode entering into the recess, a thickness of the penetration electrode in a direction crossing a direction from the first face to the second face being thicker toward a bottom of the recess from the first face side.