发明名称 Method for configuring a system to grow a crystal by coupling a heat transfer device comprising at least one elongate member beneath a crucible
摘要 Systems and methods for crystal growth are provided. One method includes producing a lateral thermal profile in a furnace having a crucible therein containing a material for growing a crystal. The lateral thermal profile has three zones, wherein the first and third zones have temperatures above and below a melting point of the material, respectively, and the second zone has a plurality of temperatures with at least one temperature equal to the melting point of the material. The method further includes combining the lateral thermal profile with a vertical thermal gradient produced in the furnace, wherein the vertical thermal gradient causes a point in a bottom of the crucible located in the third zone to be the coldest point in the crucible. The method also includes transferring heat from the first and second zones to the third zone to produce a leading edge of the interface.
申请公布号 US9206525(B2) 申请公布日期 2015.12.08
申请号 US201113308151 申请日期 2011.11.30
申请人 General Electric Company 发明人 Shahar Arie;Traub Eliezer;Rusian Peter;Rojo Juan Carlos
分类号 C30B11/00;C30B29/48 主分类号 C30B11/00
代理机构 The Small PAtent Law Group, LLC 代理人 Small Dean D.;The Small PAtent Law Group, LLC
主权项 1. A method for configuring a system to grow a crystal, the method comprising: providing a crucible having a first volume to receive therein a material for growing a crystal; configuring a furnace having an ampoule to contain the crucible within the ampoule, and to produce a lateral thermal profile having a first zone, a second zone and a third zone, wherein the first and third zones have temperatures above and below a melting point of the material, respectively, and the second zone has a plurality of temperatures with at least one temperature equal to the melting point of the material and containing a solid-liquid interface of the material; configuring the furnace to also produce a vertical thermal gradient and combine the lateral thermal profile with the vertical thermal gradient, wherein the vertical thermal gradient causes a point in a bottom of the crucible located in the third zone to be the coldest point, in the crucible; and coupling a heat transfer device comprising at least one elongate member disposed beneath the crucible, the at least one elongate member interposed between the crucible and the ampoule, and extending along a length of the crucible to an exterior of the crucible to transfer heat from the first and second zones to the third zone to produce a leading edge of the solid-liquid interface to create substantially a single nucleation center in the leading edge, wherein the at least one elongate member comprises at least one of a rod or a pipe.
地址 Schenectady NY US