Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers

摘要

Methods of fabricating a semiconductor structure include providing a semiconductor-on-insulator (SOI) substrate including a base substrate, a strained stressor layer above the base substrate, a surface semiconductor layer, and a dielectric layer between the stressor layer and the surface semiconductor layer. Ions are implanted into or through a first region of the stressor layer, and additional semiconductor material is formed on the surface semiconductor layer above the first region of the stressor layer. The strain state in the first region of the surface semiconductor layer above the first region of the stressor layer is altered, and a trench structure is formed at least partially into the base substrate. The strain state is altered in a second region of the surface semiconductor layer above the second region of the stressor layer. Semiconductor structures are fabricated using such methods.

主权项

1. A semiconductor structure, comprising:
a base substrate; and at least a first region and a second region disposed above the base substrate; wherein the first region includes:
a substantially relaxed layer disposed on the base substrate;a dielectric layer disposed above the substantially relaxed layer on a side of the substantially relaxed layer opposite the base substrate; anda compressively strained surface semiconductor layer disposed above the dielectric layer; wherein the second region includes:
a compressively strained layer disposed on the base substrate;a dielectric layer disposed above the compressively strained layer on a side thereof opposite the base substrate; anda tensilely strained surface semiconductor layer disposed above the dielectric layer; and wherein the first region and the second region are laterally separated from one another by a dielectric isolation material.