| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes: a semiconductor layer having an active region defined thereover, wherein the active region comprises a first sub-region and a second sub-region; a first doped region disposed in a portion of the semiconductor layer, extending across the first sub-region and the second sub-region; a high-voltage (HV) semiconductor element disposed over the semiconductor layer in the first sub-region, wherein the HV semiconductor element comprises a portion of the first doped region formed in the semiconductor layer in the first-sub region of the active region; and an electrostatic discharge (ESD) protection element disposed over the semiconductor layer in the second sub-region, wherein the ESD protection element comprises the other portion of the doped region formed in the semiconductor layer in the second sub-region of the active region. | ||
| 申请公布号 | US9209169(B1) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201414449381 | 申请日期 | 2014.08.01 |
| 申请人 | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION | 发明人 | Lee Tsung-Hsiung |
| 分类号 | H01L29/78;H01L27/02;H01L29/739 | 主分类号 | H01L29/78 |
| 代理机构 | Birch, Stewart, Kolasch & Birch, LLP | 代理人 | Birch, Stewart, Kolasch & Birch, LLP |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor layer having an active region, wherein the active region comprises a first sub-region and a second sub-region; a first doped region disposed in a first portion of the semiconductor layer, extending across the first sub-region and the second sub-region; a high-voltage (HV) semiconductor element disposed over the semiconductor layer in the first sub-region, wherein the HV semiconductor element comprises a portion of the first doped region formed in the semiconductor layer in the first-sub region of the active region; and an electrostatic discharge (ESD) protection element disposed over the semiconductor layer in the second sub-region, wherein the ESD protection element comprises the other portion of the first doped region formed in the semiconductor layer in the second-sub region of the active region, a second doped region disposed in a second portion of the semiconductor layer, a gate structure disposed over a third portion of the semiconductor layer, and a first conductive feature disposed over the second doped region and the gate structure, connecting the second doped region and the gate structure. | ||
| 地址 | Hsinchu TW | ||