Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal

摘要

A transfer substrate with a compliant resin is used to bond one or more chips to a target wafer. An implant region is formed in a transfer substrate. A portion of the transfer substrate is etched to form a riser. Compliant material is applied to the transfer substrate. A chip is secured to the compliant material, wherein the chip is secured to the compliant material above the riser. The chip is bonded to a target wafer while the chip is secured to the compliant material. The transfer substrate and compliant material are removed from the chip. The transfer substrate is opaque to UV light.

主权项

1. A method for bonding chips to a semiconductor using a compliant resin, the method comprising:
forming an implant region in a transfer substrate, wherein the implant region is formed at a first depth in the transfer substrate; etching a portion of the transfer substrate to form a riser, wherein:
the portion of the transfer substrate etched is etched to a second depth;the second depth is greater than the first depth in relation to a surface of the transfer substrate; andpart of the riser is not etched to the second depth, such that the riser comprises a portion of the implant region; applying a compliant material to the transfer substrate; securing a chip to the compliant material, wherein the chip is secured to the compliant material above the riser; removing a portion of the chip that extends past the compliant material, after securing the chip to the compliant material; removing an excess of the compliant material, wherein:
the excess of the compliant material comprises material that is not between the riser and the chip;removing the excess of the compliant material leaves a column of the compliant material; andthe column of the compliant material is between the riser and the chip; bonding the chip to a target wafer, wherein bonding the chip to the target wafer is performed while the chip is secured to the column of the compliant material; fracturing the transfer substrate at the implant region, such that a residual portion of the riser is separable from the transfer substrate; removing the transfer substrate from the residual portion of the riser, wherein the residual portion of the riser is connected to the column of the compliant material; removing the residual portion of the riser from the column of the compliant material, wherein the residual portion of the riser is removed from the column of the compliant material after removing the transfer substrate from the residual portion of the riser; and removing the column of the compliant material from the chip, wherein removing the column of the compliant material from the chip is performed after removing the residual portion of the riser from the column of the compliant material.