发明名称 |
Method for the treatment and direct bonding of a material layer |
摘要 |
A method for treating at least one first material layer including siloxane bonds, wherein at least one surface can be interlocked with a surface of a second material layer by direct bonding, the method including: at least one forced diffusion at a temperature greater than or equal to 30° C., at least in the first material layer, of chemical species including at least one pair of free electrons and at least one labile proton; and converting at least one portion of the siloxane bonds into silanol bonds in at least one portion of the first material layer extending from the surface to a depth greater than or equal to approximately 10 nm. |
申请公布号 |
US9209068(B2) |
申请公布日期 |
2015.12.08 |
申请号 |
US201214353883 |
申请日期 |
2012.10.24 |
申请人 |
Commissariat a l'energie atomique et aux energies alternatives |
发明人 |
Moriceau Hubert;Fournel Franck;Morales Christophe;Rauer Caroline |
分类号 |
H01L21/30;H01L21/46;H01L21/762;H01L21/20;H01L21/3105;H01L21/02;H01L21/223;H01L21/228;H01L21/306 |
主分类号 |
H01L21/30 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method for treating at least one first material layer including siloxane bonds, wherein at least one surface of the first material layer is configured to be interlocked with a surface of a second material layer by direct bonding, the method comprising:
at least one forced diffusion at a temperature greater than or equal to 30° C., at least in the first material layer, of chemical species comprising at least one pair of free electrons and at least one labile proton; and converting at least one portion of the siloxane bonds into silanol bonds in at least one portion of the first material layer extending from the surface to a depth greater than or equal to approximately 10 nm. |
地址 |
Paris FR |