TRANSISTOR USING NITRIDE SEMICONDUCTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a transistor having a nitride semiconductor and a manufacturing method of the same, which can inhibit an increase in inter-electrode capacitance including drain-source capacitance Cds.SOLUTION: A transistor comprises L-shaped metals 10 which are formed on both lateral faces of a gate electrode 8 on the source electrode 6 side and the drain electrode 7 side via an insulation film layer 9, and which are in a floating state.