发明名称 LIGHT EMITTING DIODE ARRAY ON WAFER LEVEL AND METHOD OF FORMING THE SAME
摘要 The present invention relates to a light emitting diode array, wherein multiple light emitting diodes are connected by wiring and are formed in a flip chip type. According to the present invention, the light emitting diode array includes: a substrate; the light emitting diodes located on the substrate, wherein each of the light emitting diodes includes a first semiconductor layer, an active layer, a second semiconductor layer, and a first opening unit exposing a part of the first semiconductor layer; lower electrodes arranged on the second semiconductor layers; upper electrodes electrically connected to the first semiconductor layer through the first opening unit; and a first interlayer insulation film insulating the upper electrodes from the side of the light emitting diodes. The first opening unit is arranged in parallel with one side of the second semiconductor layer, and at least one of the upper electrodes has second opening units exposing a part of the lower electrode through the first interlayer insulation film.
申请公布号 KR20150136201(A) 申请公布日期 2015.12.07
申请号 KR20140063157 申请日期 2014.05.26
申请人 SEOUL VIOSYS CO., LTD. 发明人 CHAE, JONG HYEON;JANG, JONG MIN
分类号 H01L33/36 主分类号 H01L33/36
代理机构 代理人
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