| 摘要 |
The present invention provides a method to manufacture a thin film containing Hf_3Te_2 comprising: a step of obtaining a raw material of a thin film containing Hf_3Te_2; a step of obtaining a crystalline material having a surface to form the thin film containing Hf_3Te_2; and a step of forming the thin film containing Hf_3Te_2 on the surface of the crystalline material from the raw material. During this time, the crystalline material has a crystal structure including a regular arrangement of composed atoms, a random polygon or polyhedron regularly repeated inside the regular arrangement being drawn, and a ratio of a minimum difference between a length of one side of the polygon or polyhedron and a lattice constant with respect to the lattice constant of Hf_3Te_2 being 5% or less. |
