| 摘要 |
PROBLEM TO BE SOLVED: To provide methods of depositing films of material on multiple semiconductor substrates in a multi-station processing chamber.SOLUTION: A method comprises: loading a first substrate onto a station 201 through a handler robot 226; performing N cycles of deposition; rotating a carousel 290 by 90 degrees to transfer the first substrate to a station 202; loading a second substrate onto the station 201; performing another N cycles of deposition; and then continuing similar processes until the first substrate experiences N cycles of deposition at each of processing stations 201, 202, 203 and 204 and the second substrate experiences N cycles of deposition at each of the stations 201, 202 and 203 with deposition at 204 to occur next. |
