| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing gallium nitride which allows for production of gallium nitride at low temperature, without using a hard-to-handle material.SOLUTION: Gallium nitride is produced by irradiating a gallium trihalide held on a substrate with a nitrogen neutral particle beam. Preferably, irradiation of a nitrogen neutral particle beam is performed for a thin film of a gallium trihalide formed on the substrate. Preferably, the thin film of a gallium trihalide is formed by applying a coating liquid, containing a gallium trihalide, onto the substrate. |
