| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer cleaning method that suppresses deterioration of the surface roughness of a cleaned wafer and improves the residue of particles at the outer peripheral portion of the cleaned wafer.SOLUTION: In a wafer cleaning method containing a cleaning step using ozone water and a cleaning step using hydrofluoric acid, a spin cleaning step using pure water is interposed between the cleaning step using the ozone water and the cleaning step using the hydrofluoric acid, and the cleaning process is performed in the order of (1) the cleaning step using ozone water, (2) the spin cleaning step using pure water and then (3) the cleaning step using hydrofluoric acid, or in the order of (1) the cleaning step using hydrofluoric acid, (2) the spin cleaning step using pure water and then (3) the cleaning step using ozone water. The flow rate of pure water in the spin cleaning step using the pure water is set to 1.2 L/min, and the rotational number of a wafer is set to 1,000 rpm or more. |
