| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of estimating a substrate suitable for high frequencies without actually measuring high frequency characteristics.SOLUTION: A method of estimating an SOI substrate comprises: a step of forming a device on a measurement target SOI substrate 5 in advance, and determining the relationship between interface state density of the measurement target SOI substrate 5 and leakage power under application of high frequency waves, or converting the interface state density to resistance and determining the relationship between the converted resistance and the leakage power; and a step of measuring interface state density of the estimation target SOI substrate 5 to determine the interface state density, or determining the resistance converted on the basis of the interface state density. The leakage power of the estimation target SOI substrate 5 is estimated on the basis of the relationship between the leakage power and the interface state density predetermined from the measured interface state density of the estimation target SOI substrate 5, or the leakage powder of the estimation target SOI substrate 5 is estimated on the basis of the relationship between the leakage power and the resistance predetermined from the resistance which is converted from the measured interface state density of the estimation target SOI substrate 5. |
