| 摘要 |
PROBLEM TO BE SOLVED: To further decrease an index of reflection.SOLUTION: A solid-state image pickup device comprises: a semiconductor substrate on which a photoelectric conversion part is formed for each of a plurality of pixels; and a reflection preventing structure provided on a light incident face side, where light is made incident on the semiconductor substrate, and having a plurality types of projecting parts of different heights. The reflection preventing structure is formed by the process of engraving the light incident surface of the semiconductor substrate in steps by different processing conditions. The reflection preventing structure has a second projecting part formed between the first projecting parts of predetermined height, the second projecting part being lower than the first projecting part. The present technique can be applied in, for example, a CMOS image sensor. |
