发明名称 |
MANUFACTURING APPARATUS AND METHOD FOR QUANTUM DOT ARRAY |
摘要 |
PROBLEM TO BE SOLVED: To provide a quantum dot array manufacturing apparatus and method that can stably form quantum dots each having a desired diameter at desired intervals.SOLUTION: An apparatus for manufacturing a quantum dot array containing a quantum dot layer in which plural quantum dots are arranged has: storage means 101 for storing a predetermined relational expression; acquiring means 102 for acquiring the diameter and interval of the quantum dots in the quantum dot layer; calculating means 103 for calculating the composition of silicon compound film and the condition of a thermal treatment from the diameter and interval acquired by the acquiring means 102 on the basis of the relational expression; a plasma chemical vapor growth device 104 for forming the silicon compound film having the composition calculated by the calculating means 103 so that the silicon compound film has a thickness equal to the diameter acquired by the acquiring means 102; and a thermal treatment device 105 for performing a thermal treatment on the silicon compound film formed by the plasm chemical vapor growth device 104 under the thermal treatment condition calculated by the calculating means 103. |
申请公布号 |
JP2015220249(A) |
申请公布日期 |
2015.12.07 |
申请号 |
JP20140100512 |
申请日期 |
2014.05.14 |
申请人 |
FUJITSU LTD |
发明人 |
TAKAHASHI NORIHIKO |
分类号 |
H01L29/06;C23C16/42;C23C16/50;C23C16/52;C23C16/56;H01L21/316;H01L31/0352 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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