发明名称 MANUFACTURING APPARATUS AND METHOD FOR QUANTUM DOT ARRAY
摘要 PROBLEM TO BE SOLVED: To provide a quantum dot array manufacturing apparatus and method that can stably form quantum dots each having a desired diameter at desired intervals.SOLUTION: An apparatus for manufacturing a quantum dot array containing a quantum dot layer in which plural quantum dots are arranged has: storage means 101 for storing a predetermined relational expression; acquiring means 102 for acquiring the diameter and interval of the quantum dots in the quantum dot layer; calculating means 103 for calculating the composition of silicon compound film and the condition of a thermal treatment from the diameter and interval acquired by the acquiring means 102 on the basis of the relational expression; a plasma chemical vapor growth device 104 for forming the silicon compound film having the composition calculated by the calculating means 103 so that the silicon compound film has a thickness equal to the diameter acquired by the acquiring means 102; and a thermal treatment device 105 for performing a thermal treatment on the silicon compound film formed by the plasm chemical vapor growth device 104 under the thermal treatment condition calculated by the calculating means 103.
申请公布号 JP2015220249(A) 申请公布日期 2015.12.07
申请号 JP20140100512 申请日期 2014.05.14
申请人 FUJITSU LTD 发明人 TAKAHASHI NORIHIKO
分类号 H01L29/06;C23C16/42;C23C16/50;C23C16/52;C23C16/56;H01L21/316;H01L31/0352 主分类号 H01L29/06
代理机构 代理人
主权项
地址