VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A variable resistance memory device includes: a plurality of memory cells which are individually arranged in respective intersection parts of first conductive lines extended in first direction and second conductive lines extended in a second direction, and include a variable resistance device; a plurality of first insulating patterns which are extended in the first direction between the memory cells; a plurality of second insulating patterns which are extended in the second direction between the memory cells; a plurality of first column barrier layer patterns which are separated from the memory cells in the second direction between the insulating layer patterns, and are extended in the first direction; and a plurality of second column barrier layer patterns which are separated from the memory cells in the second direction between the insulating layer patterns, and are extended in the second direction.