发明名称 AIN SINTERED BODY, AIN SUBSTRATE AND METHOD OF PRODUCING AIN SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide an AlN sintered body having low surface roughness and an AlN substrate having excellent heat transfer efficiency.SOLUTION: The AlN sintered body comprises an AlN crystal grain, and a grain boundary phase. The Vickers hardness of the grain boundary phase is lower than that of the AlN crystal grain.
申请公布号 JP2015214456(A) 申请公布日期 2015.12.03
申请号 JP20140098505 申请日期 2014.05.12
申请人 SUMITOMO ELECTRIC IND LTD;ALLIED MATERIAL CORP 发明人 AWATA HIDEAKI;YOSHIDA KATSUTO;SOGABE KOICHI;HIROSE YOSHIYUKI;ITO YASUSHI;UENISHI NOBORU;KONDO YUKA;ISHIZU SADAMU;YAMAMOTO TAKEHISA
分类号 C04B35/581;H01S5/022 主分类号 C04B35/581
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