发明名称 |
AIN SINTERED BODY, AIN SUBSTRATE AND METHOD OF PRODUCING AIN SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide an AlN sintered body having low surface roughness and an AlN substrate having excellent heat transfer efficiency.SOLUTION: The AlN sintered body comprises an AlN crystal grain, and a grain boundary phase. The Vickers hardness of the grain boundary phase is lower than that of the AlN crystal grain. |
申请公布号 |
JP2015214456(A) |
申请公布日期 |
2015.12.03 |
申请号 |
JP20140098505 |
申请日期 |
2014.05.12 |
申请人 |
SUMITOMO ELECTRIC IND LTD;ALLIED MATERIAL CORP |
发明人 |
AWATA HIDEAKI;YOSHIDA KATSUTO;SOGABE KOICHI;HIROSE YOSHIYUKI;ITO YASUSHI;UENISHI NOBORU;KONDO YUKA;ISHIZU SADAMU;YAMAMOTO TAKEHISA |
分类号 |
C04B35/581;H01S5/022 |
主分类号 |
C04B35/581 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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