发明名称 |
FUNCTIONAL DEVICE, AND METHOD FOR MANUFACTURING VANADIUM DIOXIDE THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for forming a thin film at low cost with high mass productivity.SOLUTION: A functional device 27 comprises: a device substrate 20; a buffer thin film 13 composed of a titanium dioxide thin film formed on the device substrate; and a functional thin film 16 formed on a surface of the buffer thin film and made of vanadium dioxide. The functional thin film 16 has high crystallinity, which causes its resistance value to largely change before and that after phase transition. Therefore, the functional device 27 of the present invention, such as a storage device or a thermistor, is superior in electric property. |
申请公布号 |
JP2015216241(A) |
申请公布日期 |
2015.12.03 |
申请号 |
JP20140098230 |
申请日期 |
2014.05.12 |
申请人 |
ULVAC JAPAN LTD |
发明人 |
HIROSE MITSUTAKA;KOBAYASHI HIROKI;HEMMI MITSUNORI;TSUKAKOSHI KAZUYA;TSUYUKI TATSURO;KIMURA ISAO;SU HIROTSUNA |
分类号 |
H01L27/105;C01G31/02;C23C14/08;H01L21/336;H01L29/786 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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