SEMICONDUCTOR PROCESS

摘要

A semiconductor process includes the following steps. A first gate is formed on a substrate, wherein the first gate includes a stacked gate on the substrate and a cap on the stacked gate. A spacer material is formed to conformally cover the first gate and the substrate. The spacer material is etched to form a spacer on a side of the first gate and a block on the other side of the first gate corresponding to the side. A material covers the substrate, the block, the first gate and the spacer, wherein the top surface of the material is a flat surface. The block, the spacer and the material are pulled down with the same pulling selectivity so that an assisting gate is formed from the block and a selective gate is formed from the spacer.

主权项

1. A semiconductor process, comprising:
forming a first gate on a substrate, wherein the first gate comprises a stacked gate on the substrate and a cap on the stacked gate; forming a spacer material to conformally cover the first gate and the substrate; etching the spacer material to form a spacer on a side of the first gate and a block on the other side of the first gate corresponding to the side; covering a material on the substrate, the block, the first gate and the spacer, wherein the top surface of the material is a flat surface; and pulling down the block, the spacer and the material with the same pulling selectivity, thereby forming an assisting gate from the block, and a selective gate from the spacer.