| 发明名称 |
TANTALUM SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR |
| 摘要 |
A tantalum sputtering target, wherein on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane is 70% or less, an orientation rate of a (222) plane is 10% or more, an average crystal grain size is 50 μm or more and 150 μm or less, and a variation in a crystal grain size is 30 μm or less. By controlling the crystal orientation of the target, it is possible to increase the sputter rate, consequently deposit the required film thickness in a short period of time, and improve the throughput. In addition, by controlling the crystal grain size on the sputtering surface of the target, an effect is yielded in that the abnormal discharge during sputtering can be suppressed. |
| 申请公布号 |
US2015348765(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201414654866 |
申请日期 |
2014.02.28 |
| 申请人 |
JX Nippon Mining & Metals Corporation |
发明人 |
Senda Shinichiro;Nagatsu Kotaro |
| 分类号 |
H01J37/34;C22F1/18;C22C27/02;C23C14/34 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A tantalum sputtering target, wherein on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane is 38.6% or more and 70% or less, an orientation rate of a (222) plane is 20.4% or more and 37.8% or less, an average crystal grain size is 50 μm or more and 150 μm or less, and a variation in a crystal grain size is 30 μm or less. |
| 地址 |
Tokyo JP |
