发明名称 SEMICONDUCTOR QUANTUM DOT AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor quantum dot capable of appropriately controlling an emission wavelength and luminous efficiency of a quantum dot.SOLUTION: A semiconductor quantum dot 17 includes: a substrate 11; an embedded layer 13 provided on the substrate 11; and a quantum dot 15 provided in the embedded layer 13. The embedded layer 13 includes a super lattice comprising a combination of a first crystal layer 21 and a second crystal layer 23, and the super lattice is lattice-matched with the substrate 11. An example of the substrate is an InP substrate, and examples of the first crystal layer and the second crystal layer are an InGaAs crystal layer and an InAlAs layer, respectively.
申请公布号 JP2015216144(A) 申请公布日期 2015.12.03
申请号 JP20140096322 申请日期 2014.05.07
申请人 NATIONAL INSTITUTE OF INFORMATION & COMMUNICATIONS TECHNOLOGY 发明人 AKAHA KOICHI;YAMAMOTO NAOKATSU;KAWANISHI TETSUYA
分类号 H01L33/06;B82Y20/00;B82Y40/00;H01L21/203;H01L29/06;H01S5/34 主分类号 H01L33/06
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