发明名称 |
MAGNETORESISTIVE SENSOR, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE |
摘要 |
A method for manufacturing a magnetoresistive sensor may include the following steps: forming a trench structure in a substrate, wherein the step of forming the trench structure comprises performing a wet etching process on a substrate material member, wherein the trench structure has a first side, a second side, and a third side, wherein the second side is connected through the first side to the third side, wherein the second side is at a first obtuse angle with respect to a side of the substrate, and wherein the third side is at a second obtuse angle with respect to the side of the substrate; forming a first magnetic element on the first side of the trench structure; forming a second magnetic element on the second side of the trench structure; and forming a third magnetic element on the third side of the trench structure. |
申请公布号 |
US2015349243(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
US201514668720 |
申请日期 |
2015.03.25 |
申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
XU Wei;LIU Guoan |
分类号 |
H01L43/08;G01R33/09;H01L43/12 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a magnetoresistive sensor, the method comprising:
forming a trench structure in a substrate, wherein the forming the trench structure comprises performing a wet etching process on a substrate material member, wherein the trench structure has a first side, a second side, and a third side, wherein the second side is connected through the first side to the third side, wherein the second side is at a first obtuse angle with respect to a side of the substrate, and wherein the third side is at a second obtuse angle with respect to the side of the substrate; forming a first magnetic element on the first side of the trench structure; forming a second magnetic element on the second side of the trench structure; and forming a third magnetic element on the third side of the trench structure. |
地址 |
Shanghai CN |